Etching solution, etched article and mehtod for etched article

Etching solution, etched article and mehtod for etched article

  • CN 100,595,893 C
  • Filed: 11/22/1999
  • Issued: 03/24/2010
  • Est. Priority Date: 11/24/1998
  • Status: Active Grant
First Claim
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1. one kind contains (1) hydrofluoric acid, (2) at least aly be selected from organic acid and have the composition of heteroatomic organic solvent and the etching solution of (3) water, wherein the content of hydrofluoric acid is 1 to 15 weight %, the wherein said at least a organic acid that is selected from is 30-98 weight % with the content with composition of heteroatomic organic solvent, and the ratio of the etch-rate of the etch-rate/etching thermal oxide film of this etching solution etching borosilicate glass film or phosphorus borosilicate glass film is more than 10 at 25 ℃

  • , and wherein the relative dielectric constant of solvent described in the etching solution is below 61.

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