Semiconductor luminous element and manufacturing method thereof

Semiconductor luminous element and manufacturing method thereof

  • CN 101,000,940 A
  • Filed: 01/09/2006
  • Published: 07/18/2007
  • Est. Priority Date: 01/09/2006
  • Status: Active Application
First Claim
Patent Images

1. semiconductor light-emitting elements comprises:

  • Substrate;

    AndActive layer is formed on this substrate, comprising;

    The trap layer, unintentional impurity;

    First barrier layer;

    AndSecond barrier layer, wherein this trap layer is formed between this first barrier layer and this second barrier layer, this first barrier layer has the intentional Doped n-type impurity range of contiguous this trap layer, and have the intentional impurity district away from this trap floor, this second barrier layer has the intentional impurity district of contiguous this trap floor.

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