Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method of the same

  • CN 101,017,836 A
  • Filed: 05/16/2006
  • Published: 08/15/2007
  • Est. Priority Date: 02/09/2006
  • Status: Active Application
First Claim
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1. semiconductor device comprises:

  • Semiconductor substrate forms the light receiving element district on its first type surface;

    Jut, its be arranged on light receiving element district on the first type surface of this Semiconductor substrate around;

    Bonding material layer, it is arranged on the periphery of the jut on the first type surface of this Semiconductor substrate;

    AndTransparent panel, it is supported by described jut, and is fixed on the top in this light receiving element district by this bonding material layer.

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