Planarizing a semiconductor structure to form replacement metal gates

Planarizing a semiconductor structure to form replacement metal gates

  • CN 101,027,761 A
  • Filed: 07/14/2005
  • Published: 08/29/2007
  • Est. Priority Date: 07/28/2004
  • Status: Active Grant
First Claim
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1. method comprises:

  • Form sacrificial gate structure;

    Remove described sacrificial gate structure;

    Replace described sacrificial gate structure with metal gate electrode;

    AndCover described metal gate electrode with nitride layer.

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