Improving short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions

Improving short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions

  • CN 101,027,762 A
  • Filed: 09/29/2005
  • Published: 08/29/2007
  • Est. Priority Date: 09/30/2004
  • Status: Active Grant
First Claim
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1. provide the halation injection region in the substrate of a MOS device that has gate electrode thereon and define the method for source/drain regions, described method comprises:

  • Its source/drain regions place definition undercut groove in described substrate, described undercut groove is extended under described gate electrode;

    Under described gate electrode between the described groove, form the halation injection region;

    AndAfter forming described halation injection region, in described undercut groove, provide raised source.

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