Method for stripping photoresist from etched wafer

Method for stripping photoresist from etched wafer

  • CN 101,032,003 A
  • Filed: 07/20/2005
  • Published: 09/05/2007
  • Est. Priority Date: 08/02/2004
  • Status: Active Application
First Claim
Patent Images

1. , a kind of method that forms feature in low-k dielectric layer comprises:

  • In substrate, place low-k dielectric layer;

    Described low-place the photoresist mask of patterning on the k dielectric layer;

    With at least one feature etch into described low-the k dielectric layer in;

    Provide and comprise CO 2Demoulding gas;

    From comprising CO 2Demoulding gas form plasma;

    With Use since comprising CO 2The product of the plasma that forms of demoulding gas come the photoresist mask of the described patterning of the demoulding.

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