Gate stacks

Gate stacks

  • CN 101,032,024 A
  • Filed: 09/30/2005
  • Published: 09/05/2007
  • Est. Priority Date: 10/01/2004
  • Status: Active Grant
First Claim
Patent Images

1. method that forms semiconductor structure comprises step:

  • Semiconductor regions is provided;

    Gate stack is formed on the top at described semiconductor regions, and described gate stack comprises(i) in the gate dielectric at described semiconductor regions top,(ii) at the first grid polysilicon region at described gate dielectric top, and(iii) at the second grid polysilicon region at described first grid polysilicon region top, described second grid polysilicon region is mixed by the dopant with a type;

    WithOn the sidewall of described gate stack, form diffusion barrier region and isolation oxidation object area,Wherein, described diffusion barrier region is clipped between described gate stack and the described isolation oxidation object area, andWherein, described diffusion barrier region all is in direct physics with the described first and second grid polycrystalline silicon zones and contacts.

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