Microstructure, semiconductor device, and manufacturing method of the microstructure

Microstructure, semiconductor device, and manufacturing method of the microstructure

  • CN 101,033,057 B
  • Filed: 03/09/2007
  • Issued: 05/01/2013
  • Est. Priority Date: 03/10/2006
  • Status: Active Grant
First Claim
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1. micro-structural comprises:

  • Have the first structure sheaf of first surface, described first surface has the first roughness;

    AndThe second structure sheaf with the first part and second part, described the first part is fixed to the first of described first surface, described the second part has second surface, described second surface has the second roughness, described second surface is in the face of the second portion of described first surface, between the described second portion of described first surface and described second surface, accompany the spaceWherein,In described the first structure sheaf and described the second structure sheaf at least one can change the position;

    Described the first roughness and described the second roughness differ from one another, andBetween the summit of the most adjacent protuberance of described the first structure sheaf first distance is longer than the second distance between the summit of the most adjacent protuberance of described the second structure sheaf.

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