Method for nullifying temperature dependence and circuit therefor

Method for nullifying temperature dependence and circuit therefor

  • CN 101,034,295 A
  • Filed: 02/15/2007
  • Published: 09/12/2007
  • Est. Priority Date: 02/17/2006
  • Status: Active Grant
First Claim
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1. one kind is used to the method that makes the temperature dependency relevant with mutual conductance invalid, comprising:

  • Produce first electric current, it is independent of the threshold voltage of first isolated-gate field effect transistor (IGFET) (26) substantially, and described first electric current and first transconductance parameters are proportional;

    Second isolated-gate field effect transistor (IGFET) with second transconductance parameters (28,30) is provided;

    AndUse described second isolated-gate field effect transistor (IGFET) (28,30) and described first electric current of a part, make the temperature effect of described first transconductance parameters invalid, and produce the output that is independent of described first transconductance parameters substantially.

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