Method for nullifying temperature dependence and circuit therefor

Method for nullifying temperature dependence and circuit therefor

  • CN 101,034,295 B
  • Filed: 02/15/2007
  • Issued: 06/18/2014
  • Est. Priority Date: 02/17/2006
  • Status: Active Grant
First Claim
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1. for making the method that the temperature dependency relevant to mutual conductance is invalid, comprising:

  • Produce the first electric current, it is independent of the threshold voltage of the first isolated-gate field effect transistor (IGFET) (26) substantially, and described the first electric current is and the drain current of the first proportional described the first isolated-gate field effect transistor (IGFET) of transconductance parameters (26);

    Second isolated-gate field effect transistor (IGFET) (28) with the second transconductance parameters is provided;

    The 3rd isolated-gate field effect transistor (IGFET) (30) with described the second transconductance parameters is provided;

    AndUse the Part I of described the second isolated-gate field effect transistor (IGFET) (28) and described the first electric current and the Part II of the 3rd isolated-gate field effect transistor (IGFET) (30) and described the first electric current, make the temperature effect of described the first and second transconductance parameters invalid, andProduce the output that is substantially independent of described the first and second transconductance parameters and comprises the hysteresis that is independent of temperature.

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