Photo-sensor and method of forming the photo-sensor

Photo-sensor and method of forming the photo-sensor

  • CN 101,034,711 B
  • Filed: 02/15/2007
  • Issued: 09/22/2010
  • Est. Priority Date: 02/17/2006
  • Status: Active Grant
First Claim
Patent Images

1. imaging sensor unit comprises:

  • The semiconductor layer of first conduction type;

    At the isolation well of second conduction type on a surface of described semiconductor layer, described second conduction type and described first conductivity type opposite, the isolation well of the semiconductor layer of described first conduction type and described second conduction type forms optical pickocff;

    AndColour filter at the opposed surface place of described semiconductor layer, the light that described colour filter filters be by described optical pickocff sensing optionally,Also be formed with a plurality of FET in the wherein said isolation well, thereby described a plurality of FET connection makes optionally light signal sense described optical pickocff.

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