Nitride semiconductor light emitting device

Nitride semiconductor light emitting device

  • CN 101,034,727 A
  • Filed: 03/07/2007
  • Published: 09/12/2007
  • Est. Priority Date: 03/08/2006
  • Status: Active Grant
First Claim
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1. nitride semiconductor photogenerator, described nitride semiconductor photogenerator comprise that first of the aluminium nitride that is formed on luminous component or aluminium oxynitride film and be formed on described first second the filming of aluminium oxide on filming.Described second thickness of filming is at least 80nm and is at most 1000nm.

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