Method for forming gate insulating film, semiconductor device and computer recording medium

Method for forming gate insulating film, semiconductor device and computer recording medium

  • CN 101,044,626 B
  • Filed: 10/27/2005
  • Issued: 01/25/2012
  • Est. Priority Date: 10/28/2004
  • Status: Active Grant
First Claim
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1. the formation method of a gate insulating film is characterized in that, comprising:

  • Utilize to use microwave that plate aerial produces with argon gas and nitrogen gas plasmaization and utilize this plasma that the oxide-film that constitutes said dielectric film is carried out the operation of plasma nitridation process,Nitrogen is imported in the said oxide-film so that the nitrogen concentration in the said gate insulating film is 5~

    20% atomic concentrations,Said plasma nitridation process comprises;

    Substrate is moved into the operation of handling in the container;

    Remove the operation of the residual oxygen in the container handling subsequently with vacuumizing in the container handling;

    Subsequently said substrate is heated to 100~

    600 ℃

    operation;

    Subsequently the necessary processing gas of nitrogen treatment is imported the operation in the container handling;

    WithIn container handling, generate plasma subsequently and carry out the operation of plasma nitridation process,Pressure when carrying out plasma nitridation process is 1~

    66.65Pa,In container handling, generate plasma and carry out in the operation of plasma nitridation process;

    Has the pressure when making the interior pressure of container handling be higher than nitrogen treatment;

    And the flow of the flow that also makes argon gas during more than nitrogen treatment, the operation of carrying out the igniting of plasmaIn the operation of the igniting of said plasma, the flow of nitrogen is zero.

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