Semiconductor chip or device of vertical structure

Semiconductor chip or device of vertical structure

CN
  • CN 101,051,630 A
  • Filed: 05/14/2007
  • Published: 10/10/2007
  • Est. Priority Date: 05/14/2007
  • Status: Active Application
First Claim
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1. the semiconductor chip of a vertical stratification or equipment is characterized in that, comprising:

  • The semiconductor epitaxial loayer;

    At least one the first half through hole is arranged in the described semiconductor epitaxial layers;

    One metallization supporting chip;

    Wherein, go up first and second electrodes that form mutual electric insulation for second of described metallization supporting chip;

    Second electrode on second of the described metallization supporting chip is electrically connected with at least one through hole/metal filled up plug;

    First electrode on second of the described metallization supporting chip is electrically connected with at least one through hole/metal filled up plug;

    First one side with described semiconductor epitaxial layers of described metallization supporting chip is bonded together, and the another side of described semiconductor epitaxial layers exposes;

    At least one protects plug;

    Wherein, described protection plug is layered at least one the first half through hole in the described semiconductor epitaxial layers;

    At least one patterned electrode;

    Wherein, described patterned electrode layer is stacked on the surface of exposure of described protection plug and described semiconductor epitaxial layers;

    At least one the second half through hole;

    Described the second half through holes pass described protection plug;

    At least one half through hole/metal filled up plug;

    Wherein, described half through hole/metal filled up plug is layered in described at least one the second half through hole;

    At least one half through hole/metal filled up plug is electrically connected described patterned electrode with at least one through hole/metal filled up plug in the described metallization supporting chip;

    Described protection plug is half through hole/metal filled up plug and the mutual electric insulation of described semiconductor epitaxial layers.

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