Semiconductor device and power amplifier

Semiconductor device and power amplifier

  • CN 101,053,151 B
  • Filed: 09/28/2005
  • Issued: 01/25/2012
  • Est. Priority Date: 11/29/2004
  • Status: Active Grant
First Claim
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1. semiconductor device is connected in parallel to the amplifying circuit of the power amplification of a plurality of execution high-frequency signals between input terminal and lead-out terminal,Above-mentioned amplifying circuit comprises:

  • collector electrode is connected to the bipolar transistor of above-mentioned lead-out terminal;

    The vibrational stabilization circuit, it is connected between the base stage of above-mentioned input terminal and this bipolar transistor, and becomes resistance states for low frequency signal, becomes short-circuit condition for high-frequency signal;

    And ballasting circuit, one of which is distolateral to be connected between the distolateral base stage that is connected this vibrational stabilization circuit and above-mentioned bipolar transistor of bias terminal and another, prevents the thermal runaway of above-mentioned bipolar transistor,The low distortion resistance that between above-mentioned input terminal and bias terminal, connects the distortion of the high-frequency signal be used to reduce above-mentioned lead-out terminal side.

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