Method of manufacturing semiconductor device

Method of manufacturing semiconductor device

  • CN 101,055,842 B
  • Filed: 02/27/2004
  • Issued: 09/17/2014
  • Est. Priority Date: 05/21/2003
  • Status: Active Grant
First Claim
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1. the manufacture method of a semiconductor device, this semiconductor device is in the element-forming region by being formed at element separated region end face structure regulation, that have similar H shape in the interarea of semiconductor substrate, formation has the transistor of source electrode and drain region, channel doping region and grid structure, and above-mentioned manufacture method possesses following operation:

  • (a) on the interarea of semiconductor substrate, form the operation of the 1st dielectric film;

    (b) on above-mentioned the 1st dielectric film, form the operation of conducting film;

    (c) impurity to whole Implantation the 1st conductivity type of above-mentioned element-forming region by above-mentioned conducting film and above-mentioned the 1st dielectric film, forms the operation in channel doping region;

    (d), by above-mentioned conducting film is carried out to composition, form the operation of gate electrode;

    (e) in the above-mentioned interarea by the part to exposing from above-mentioned gate electrode, import impurity, form the operation of source electrode and drain region.

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