Cleaning method for removing the optical resistance residue and dual enchasing technology of the copper making process

Cleaning method for removing the optical resistance residue and dual enchasing technology of the copper making process

  • CN 101,055,849 A
  • Filed: 04/12/2006
  • Published: 10/17/2007
  • Est. Priority Date: 04/12/2006
  • Status: Active Grant
First Claim
Patent Images

1. , a kind of residual cleaning method of photoresistance of removing is characterized in that, comprising:

  • Semiconductor device is provided, deposits on it and be used for the auxiliary auxiliary layer of finishing lithography step, and the photoresist layer on the auxiliary layer;

    The first chemical cleaning step;

    Deionized water rinsing;

    The second chemical cleaning step;

    Deionized water rinsing;

    Drying steps.

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