Cleaning method for removing the optical resistance residue and dual enchasing technology of the copper making process

Cleaning method for removing the optical resistance residue and dual enchasing technology of the copper making process

  • CN 101,055,849 B
  • Filed: 04/12/2006
  • Issued: 06/09/2010
  • Est. Priority Date: 04/12/2006
  • Status: Active Grant
First Claim
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1. remove the residual cleaning method of photoresistance for one kind, it is characterized in that, comprising:

  • Semiconductor device is provided, the auxiliary deep UV of finishing lithography step that is used for that deposits dielectric layer on it and be deposited on the dielectric layer absorbs oxide layer, and the deep UV photoresist layer on the deep UV absorption oxide layer, it is siloxane polymer that described deep UV absorbs oxide layer;

    Carry out carrying out carrying out the first chemical cleaning step after photoetching and the etching after photoetching and the etching, absorb the cleaning rate of the cleaning rate of oxide layer at deep UV described in the described step faster than described deep UV photoresist layer, make that the removed described deep UV photoresist layer of its down described deep UV absorption oxide layer of part floats behind the described cleaning operation of experience;

    Deionized water rinsing is removed the described deep UV photoresist layer that floats;

    The second chemical cleaning step, the cleaning agent in the described first chemical cleaning step and the second chemical cleaning step is CLK888, and described CLK888 comprises H2O2, sulfolane, TMAH;

    Deionized water rinsing;

    Drying steps.

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