Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

  • CN 101,055,894 A
  • Filed: 04/11/2007
  • Published: 10/17/2007
  • Est. Priority Date: 04/11/2006
  • Status: Active Application
First Claim
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1. semiconductor device comprises:

  • Heterojunction diode, it is made of first semiconductor region and second semiconductor region, and described second semiconductor region has the band gap different with the band gap of described first semiconductor region and forms heterojunction with described first semiconductor region,Wherein, heterojunction regions is formed when described heterojunction diode being applied predetermined reverse biased, and the puncture voltage in the heterojunction regions beyond the outer circumference end of described heterojunction diode is the puncture voltage of described semiconductor device at least.

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