Resistive memory element, operating method thereof, and data processing system using the memory element

Resistive memory element, operating method thereof, and data processing system using the memory element

  • CN 101,055,917 A
  • Filed: 01/09/2007
  • Published: 10/17/2007
  • Est. Priority Date: 01/09/2006
  • Status: Active Application
First Claim
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1. the memory element of a multi-bit memory cell, this memory element comprises:

  • Metal oxide film, wherein the impedance response of metal oxide film is in the electric current that is applied on it, corresponding one from first impedance state to a plurality of other impedance states is switchable, and wherein the impedance of first impedance state greater than each impedance of a plurality of other impedance states.

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