Thin film transistor and pixel structure and its manufacture method

Thin film transistor and pixel structure and its manufacture method

  • CN 101,060,126 A
  • Filed: 03/27/2007
  • Published: 10/24/2007
  • Est. Priority Date: 03/27/2007
  • Status: Active Application
First Claim
Patent Images

1. a dot structure is characterized in that, this dot structure comprises:

  • One substrate;

    Semi-conductor layer is arranged on this substrate, and comprises an active region and a storage capacitors district;

    An one source pole and a drain electrode are arranged on this semiconductor layer;

    One separator is arranged on this source electrode, drain electrode and the semiconductor layer;

    One grid is arranged on this separator and is positioned at described active region top;

    One dielectric layer is arranged on this grid;

    One screen is arranged on this dielectric layer, and comprises a contact hole, and this contact hole is to expose described drain electrode;

    AndOne conductive layer is arranged on the described screen, and electrically connects by described contact hole and described drain electrode.

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