Magnetic random access memory element, and method for writing and producing

Magnetic random access memory element, and method for writing and producing

  • CN 101,064,184 A
  • Filed: 04/26/2007
  • Published: 10/31/2007
  • Est. Priority Date: 04/28/2006
  • Status: Active Application
First Claim
Patent Images

1. magnetic random access memory cells comprises:

  • Word line;

    Bit line;

    AndThe thin magnetic film memory element, be arranged at the infall of described word line and described bit line, wherein said thin magnetic film memory element comprises the alloy that is made of rare-earth element and transition metal, when wherein being applied in heating current, described word line can heat running to heat described film memory element.

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