Method for producing semiconductor structure of thin-film transistor and planar display device

Method for producing semiconductor structure of thin-film transistor and planar display device

  • CN 101,075,564 A
  • Filed: 06/07/2007
  • Published: 11/21/2007
  • Est. Priority Date: 06/07/2007
  • Status: Active Application
First Claim
Patent Images

1. the manufacture method of a thin-film transistor structure comprises the following step at least:

  • On substrate, form the patterning stack layer, comprise first conductive layer, first dielectric layer, channel layer, protective layer and the first photoresist layer that from bottom to top pile up;

    Remove the outer ring portion of the patterning first photoresist layer, form the patterning second photoresist layer;

    With this patterning second photoresist layer is mask, removes this protective layer that exposes, this channel layer of exposed portions serve;

    Remove this patterning second photoresist layer;

    With this patterning protective layer is mask, this channel layer of doping expose portion;

    Sidewall at this first conductive layer and this first dielectric layer forms side wall spacer;

    Form first lead and second lead respectively in these patterning protective layer both sides, electrically connect this channel layer;

    AndWith this patterning protective layer and this first lead and second lead is mask, removes this channel layer that exposes.

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