Semiconductor device

Semiconductor device

  • CN 101,075,628 A
  • Filed: 02/27/2007
  • Published: 11/21/2007
  • Est. Priority Date: 05/18/2006
  • Status: Active Application
First Claim
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1. semiconductor device is characterized in that:

  • Comprise many word lines;

    Multiple bit lines is configured on the direction of intersecting with above-mentioned word line;

    And a plurality of memory cells, be configured on the predetermined intersection point of above-mentioned word line and above-mentioned bit line,Each of above-mentioned a plurality of memory cells comprises tunnel magnetoresistance element, stacked fixed bed, tunnel film and free layer;

    And MOSFET, its grid is connected on the above-mentioned word line, and its drain electrode is connected on the end of above-mentioned tunnel magnetoresistance element,The said fixing layer, in abutting connection with the configuration of above-mentioned tunnel film ground, the direction of the electron spin of this fixed bed is fixed on predetermined direction,Above-mentioned free layer, in abutting connection with a face of above-mentioned tunnel film, this face be the face relative with the face in abutting connection with the said fixing layer of above-mentioned tunnel film, the direction of the electron spin of this free layer is with respect to make even either direction in capable, the antiparallel of said fixing layer,The spin of above-mentioned free layer utilizes the spin-injection magnetic counter-rotating to come writing information,When carrying out above-mentioned write activity, make the 1st electric current flow through in the above-mentioned tunnel magnetoresistance element after, 2nd electric current bigger than above-mentioned the 1st electric current flow through.

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