Semiconductor device

Semiconductor device

  • CN 101,075,628 B
  • Filed: 02/27/2007
  • Issued: 01/08/2014
  • Est. Priority Date: 05/18/2006
  • Status: Active Grant
First Claim
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1. a semiconductor device is characterized in that:

  • Comprise many word lines;

    Multiple bit lines, be configured on the direction of intersecting with above-mentioned word line;

    And a plurality of memory cells, be configured on the predetermined intersection point of above-mentioned word line and above-mentioned bit line,Each of above-mentioned a plurality of memory cells, comprise tunnel magnetoresistance element, has tunnel film, fixed bed and free layer;

    And MOSFET, its grid is connected on above-mentioned word line, and its drain electrode is connected to the above-mentioned fixed bed side of above-mentioned tunnel magnetoresistance element,Above-mentioned fixed bed, in abutting connection with the configuration of above-mentioned tunnel film ground, the direction of the electron spin of this fixed bed is fixed on predetermined direction,Above-mentioned free layer, in abutting connection with a face of above-mentioned tunnel film, this face be the face relative with the face in abutting connection with fixed bed of above-mentioned tunnel film, the either direction that the direction of the electron spin of this free layer is made even in capable, antiparallel with respect to above-mentioned fixed bed,The spin of above-mentioned free layer, utilize the spin-injection magnetic reversion to be rewritten,While being read, above-mentioned memory cell is applied in following electric current, and the electric current that this electric current applies when carrying out rewrite action is compared, and the short and current value of its pulse duration is same degree.

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