Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

  • CN 101,079,445 B
  • Filed: 02/25/2007
  • Issued: 07/13/2011
  • Est. Priority Date: 02/21/2006
  • Status: Active Grant
First Claim
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1. a manufacturing comprises the method for the semiconductor device of field-effect transistor, comprising:

  • Forming isolated area on silicon substrate makes it center on the zone that will form described field-effect transistor;

    Be formed with epitaxial growing strain inducing layer on the described silicon substrate of described isolated area thereon;

    Epitaxial growth silicon layer on described strain inducing layer;

    WithIn described silicon layer, form described field-effect transistor, make source/drain region and described strain inducing layer separate;

    Cause strain in the channel part of the described field-effect transistor of wherein said strain inducing layer in described silicon layer, andThe described formation of wherein said isolated area is included in and forms described isolated area in the described surface of silicon substrate layer, thereby the thickness that reduces described silicon substrate from described superficial layer one side then makes described silicon substrate recessed with respect to described isolated area.

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