Horizontal dispersion oxide semiconductor of heterogeneous bar multi-step field electrode board

Horizontal dispersion oxide semiconductor of heterogeneous bar multi-step field electrode board

  • CN 101,079,446 A
  • Filed: 06/01/2007
  • Published: 11/28/2007
  • Est. Priority Date: 06/01/2007
  • Status: Active Application
First Claim
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1. , heterogeneous bar multi-step field plate lateral double-diffused metallic oxide semiconductor tube, it is characterized in that being provided with the heterogeneous double-gate structure of source grid (3) and drain-gate (4), constitute the multi-ladder field plate by first order field plate (11) and second level field plate (12), source grid (3), drain-gate (4), first order field plate (11) and second level field plate (12) link to each other successively;

  • Source (1) and leakage (2) are separately positioned on channel well region (6) and trap drift region (7);

    Gate oxide (8) is located between source grid (3), drain-gate (4) and the channel well region (6), is provided with trap contact hole (61) on channel well region (6);

    Field oxide (9) is between first order field plate (11), second level field plate (12) and trap drift region (7);

    Oxide layer (10) covers on the described multi-ladder field plate;

    Channel well region (6) and trap drift region (7) all are positioned on the substrate (5).

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