Sacrificial substrate for etching

Sacrificial substrate for etching

  • CN 101,080,360 A
  • Filed: 10/21/2005
  • Published: 11/28/2007
  • Est. Priority Date: 10/21/2004
  • Status: Active Grant
First Claim
Patent Images

1. the method for an etching silicon substrate comprises:

  • Join first silicon base (200) to sacrificial silicon substrate (240,241);

    Described first silicon base of etching (200);

    AndExerting pressure at the interface of described first silicon base (200) and sacrificial silicon substrate (240,241), thereby cause that described first silicon base (200) separates from sacrificial silicon substrate (240,241).

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×