Method of storing gan substrate, stored substrate and semiconductor device and method of its manufacture

Method of storing gan substrate, stored substrate and semiconductor device and method of its manufacture

  • CN 101,090,062 A
  • Filed: 06/14/2007
  • Published: 12/19/2007
  • Est. Priority Date: 06/14/2006
  • Status: Active Application
First Claim
Patent Images

1. method that stores the GaN substrate comprises:

  • Have 18vol.% or following oxygen concentration and/or 25g/m 3Or store the step of GaN substrate under the atmosphere of following water vapor concentration.

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