Multi-gas distribution injector for chemical vapor deposition reactors

Multi-gas distribution injector for chemical vapor deposition reactors

  • CN 101,090,998 B
  • Filed: 07/29/2005
  • Issued: 10/16/2013
  • Est. Priority Date: 08/02/2004
  • Status: Active Grant
First Claim
Patent Images

1. the method for a chemical vapour deposition comprises:

  • (a) will be discharged in the reaction chamber by a plurality of isolated forerunner'"'"'s entrances in the gas distribution injector as at least one precursor gas of a plurality of air-flows, so that described air-flow has the edge away from the velocity component of the downstream direction of the one or more substrates of described injector in being arranged on described chamber, described at least one precursor gas reaction and form and be deposited on described one or more suprabasil reactive deposition thing, described reactive deposition thing are one of in II-VI compounds of group, III-V family semi-conductor and the IV-IV compounds of group;

    And, side by side(b) with at least one and described at least one precursor gas basically nonreactive vector gas be discharged in the described chamber from described injector, described vector gas relatively all precursor gas gives off from screen independently, described screen is formed by the perforate different from described forerunner'"'"'s entrance, described perforate roughly enters young than described forerunner and roughly closely separates than described forerunner'"'"'s entrance, described screen extends between adjacent described forerunner'"'"'s entrance, like this, vector gas discharges between each described forerunner'"'"'s entrance described forerunner'"'"'s entrance adjacent with all.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×