Method for measuring nano film thickness through Auger electronic energy spectrum
Method for measuring nano film thickness through Auger electronic energy spectrum
 CN 101,091,101 A
 Filed: 12/27/2004
 Published: 12/19/2007
 Est. Priority Date: 12/27/2004
 Status: Active Application
First Claim
1. method for measuring thickness comprises:
 Thin layer on the substrate is carried out the Auger electron spectroscopy analysis;
Gather the Auger electron spectroscopy data of a cluster film layer;
Utilize predetermined mathematical model that these group data are calculated;
AndAccording to calculating the thickness of determining thin layer.
Chinese PRB Reexamination
Abstract
A system and method for measuring the thickness of an ultrathin multilayer film on a substrate is disclosed. A physical model of an ultrathin multilayer structure and Auger electron emission from the nanomultilayer structure is built. A mathematical model for the Auger Electron Spectroscopy (AES) measurement of the multilayer thin film thickness is derived according to the physical model. Auger electron spectroscopy (AES) is first performed on a series of calibration samples. The results are entered into the mathematical model to determine the parameters in the mathematical equation. The parameters may be calibrated by the correlation measurements of the alternate techniques. AES analysis is performed on the ultrathin multilayer film structure. The results are entered into the mathematical model and the thickness is calculated.

3 Citations
A method of the superconducting nanowire analysis of Uniformity based on element imaging  
Patent #
CN 108,535,305 A
Filed 03/30/2018

Current Assignee

Film formation acquisition apparatus and film formation acquisition method  
Patent #
TWI457536B
Filed 11/08/2011

Current Assignee

The method that technology determines elemental composition depth profile in film is dissected with sputter depth  
Patent #
CN 106,770,620 A
Filed 11/21/2016

Current Assignee

No References
20 Claims

1. method for measuring thickness comprises:

Thin layer on the substrate is carried out the Auger electron spectroscopy analysis; Gather the Auger electron spectroscopy data of a cluster film layer; Utilize predetermined mathematical model that these group data are calculated;
AndAccording to calculating the thickness of determining thin layer.


2. the method for measuring thickness of claim 1, the first film layer and second thin layer that wherein have combination thickness at least are applied on the substrate.

3. the method for measuring thickness of claim 2, wherein two thin layers are ultrathin retes that combination thickness is less than or equal to 5 nanometers.

4. the method for measuring thickness of claim 3 further comprises:

Utilize angle (θ
), first strength ratio (a) and first modifying factor (R) of attenuation length (λ
), Auger electron path and normal between the first film layer (X) and second thin layer (Y), determine the thickness (t) of first rete according to following mathematical model;$t={\mathrm{\λYX\mathrm{cos}\mathrm{theta;CenterDot;\mathrm{ln}(aCenterDot;R+1);}}}_{}^{}$ WithUtilize the angle (θ
), second strength ratio (a '"'"') of attenuation length (λ
), Auger electron path and normal between second thin layer (X) and the substrate (Y) and second modifying factor (R '"'"'), determine the thickness (dt) of first rete according to following mathematical model;


5. the method for measuring thickness of claim 2 further comprises:
Utilize angle (θ
), strength ratio (a ") and the modifying factor (R) of attenuation length (λ
), Auger electron path and normal between the first film layer (X) and second thin layer (Y), determine the thickness (t) of first rete according to following mathematical model;

6. the method for measuring thickness of claim 1 further comprises:

Set up the physical model of film on substrate layer; The mathematical model of the Auger electron emission of derivation film on substrate layer; Utilize Auger electron spectroscopy to determine the numerical value of one group of parameter that mathematical model is used;
AndBy using substitute technology to carry out measurement of correlation, calibrate this group parameter.


7. the method for measuring thickness of claim 6 wherein substitutes measuring technique and comes from the group that comprises atomic force microscope, transmission electron microscope and be used for chemicoanalytic electronic energy spectrum.

8. the method for measuring thickness of claim 6 comprises changing predetermined mathematical model to be used for different physical models.

9. reside in one group of instruction in the storage medium, described instruction group can be carried out by processor, thereby finishes the method for deal with data, and this method comprises:

Thin layer on the substrate is carried out Auger electron spectroscopy; Gather the data of the Auger electron spectroscopy of a cluster film layer; Utilize predetermined mathematical model that these group data are calculated;
AndAccording to calculating the thickness of determining thin layer.


10. according to one group of instruction of claim 9, the first film layer and second thin layer that wherein have combination thickness at least are applied on the substrate.

11. according to one group of instruction of claim 10, wherein two thin layers are ultrathin retes that combination thickness is less than or equal to 5 nanometers.

12. one group of instruction according to claim 11 further comprises:

Utilize angle (θ
), first strength ratio (a) and first modifying factor (R) of attenuation length (λ
), Auger electron path and normal between the first film layer (X) and second thin layer (Y), determine the thickness (t) of first rete according to following mathematical model;$t={\mathrm{\λYX\mathrm{cos}\mathrm{theta;CenterDot;\mathrm{ln}(aCenterDot;R+1);}}}_{}^{}$ WithUtilize the angle (θ
), second strength ratio (a '"'"') of attenuation length (λ
), Auger electron path and normal between second thin layer (X) and the substrate (Y) and second modifying factor (R '"'"'), determine the thickness (dt) of first rete according to following mathematical model;


13. one group of instruction according to claim 10 further comprises:
Utilize angle (θ
), strength ratio (a ") and the modifying factor (R) of attenuation length (λ
), Auger electron path and normal between the first film layer (X) and second thin layer (Y), determine the thickness (t) of first rete according to following mathematical model;

14. the cover instruction according to claim 9 further comprises:

Utilize the Auger electron spectroscopy of the physical model of film on substrate layer, determine the numerical value of one group of parameter in the predetermined mathematical model;
AndUse alternative measuring technique to calibrate this group parameter.


15. one group of instruction of claim 14 wherein substitutes measuring technique and comes from the group that comprises atomic force microscope, transmission electron microscope and be used for chemicoanalytic electronic energy spectrum.

16. one group of instruction of claim 14 further comprises the predetermined mathematical model of change to be used for different physical models.

17. a test macro comprises:

The Auger electron spectroscopy device is used for the first film layer on the substrate and second thin layer are analyzed;
AndComputing machine is used to gather one group of data from the Auger electron spectroscopy of thin layer, and utilizes predetermined mathematical model that these group data are calculated, thereby calculates the thickness of determining thin layer according to this.


18. the thickness measurement system of claim 17, wherein two thin layers are ultrathin retes that combination thickness is less than or equal to 5 nanometers.

19. thickness measurement system according to claim 18, wherein computing machine utilizes angle (θ
 ), first strength ratio (a) and first modifying factor (R) of attenuation length (λ
), Auger electron path and normal between the first film layer (X) and second thin layer (Y), determines the thickness (t) of first rete according to following mathematical model;$t={\mathrm{\λYX\mathrm{cos}\mathrm{theta;CenterDot;\mathrm{ln}(aCenterDot;R+1);}}}_{}^{}$ WithUtilize the angle (θ
), second strength ratio (a '"'"') of attenuation length (λ
), Auger electron path and normal between second thin layer (X) and the substrate (Y) and second modifying factor (R '"'"'), determine the thickness (dt) of first rete according to following mathematical model;
 ), first strength ratio (a) and first modifying factor (R) of attenuation length (λ

20. the thickness measurement system according to claim 18 further comprises:
Utilize angle (θ
), strength ratio (a ") and the modifying factor (R) of attenuation length (λ
), Auger electron path and normal between the first film layer (X) and second thin layer (Y), determine the thickness (t) of first rete according to following mathematical model;
Specification(s)