Semiconductor device and operation control method for same

Semiconductor device and operation control method for same

  • CN 101,091,252 B
  • Filed: 12/28/2004
  • Issued: 09/05/2012
  • Est. Priority Date: 12/28/2004
  • Status: Active Grant
First Claim
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1. semiconductor device comprises:

  • Semiconductor substrate;

    Character line;

    The universe bit line;

    Diffusion zone is between the said universe bit line in being arranged at said Semiconductor substrate and adjacency other universe bit line of said universe bit line, in order to combine said universe bit line;

    Reverse grid;

    Form inversion layer in said Semiconductor substrate as regional bit line;

    And said inversion layer is connected with said diffusion zone;

    Thus said inversion layer is electrically connected to said universe bit line, said reverse grid are arranged on said universe bit line below and the parallel formation with the configuration consistency of said universe bit line;

    AndMemory cell uses said inversion layer as source electrode and drain electrode.

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