A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode

A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode

  • CN 101,095,223 A
  • Filed: 08/22/2005
  • Published: 12/26/2007
  • Est. Priority Date: 09/08/2004
  • Status: Active Application
First Claim
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1. method of making semiconductor device comprises:

  • On substrate, form first dielectric layer;

    In described first dielectric layer, form groove;

    Form second dielectric layer on described substrate, described second dielectric layer has the first that is formed at described channel bottom, and second portion;

    Forming the first metal layer in the described first of described second dielectric layer and on the described second portion of described second dielectric layer with first work function;

    AndThe described the first metal layer that is formed in the described first of described second dielectric layer is transformed into second metal level with second work function.

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