Method for forming a shallow trench isolation region

Method for forming a shallow trench isolation region

  • CN 101,097,884 A
  • Filed: 06/27/2007
  • Published: 01/02/2008
  • Est. Priority Date: 06/27/2006
  • Status: Active Application
First Claim
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1. , a kind of method that is used to form shallow-channel isolation region comprises:

  • One substrate is provided;

    Above this substrate, form a pad oxide layer;

    Above this pad oxide layer, form a silicon nitride layer;

    This silicon nitride layer of patterning, this pad oxide layer and this substrate are to form irrigation canals and ditches;

    Above these irrigation canals and ditches, form the monoxide lining;

    Above this liner oxide, form the mononitride lining;

    AndCarry out an original position two stages high density plasma enhanced chemical vapor deposition and handle, wherein this two stage of original position high density plasma enhanced chemical vapor deposition is handled and is comprised;

    In a phase I chemical vapor deposition process, deposition one first dielectric above this nitride liner;

    AndIn a second stage chemical vapor deposition process, remove the top of this nitride liner, and deposit one second dielectric simultaneously to fill this irrigation canals and ditches.

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