Photovoltaic device which includes all-back-contact configuration, and related fabrication processes

Photovoltaic device which includes all-back-contact configuration, and related fabrication processes

  • CN 101,097,969 A
  • Filed: 06/29/2007
  • Published: 01/02/2008
  • Est. Priority Date: 06/30/2006
  • Status: Active Application
First Claim
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1. semiconductor structure comprises:

  • (a) a kind of Semiconductor substrate of conduction type (10), it has front surface (12) and rear surface (14);

    (b) first noncrystal semiconductor layer (16), it is arranged on the front surface (12) of Semiconductor substrate (10);

    (c) second noncrystal semiconductor layer (22), it is arranged on the part of rear surface (14) of Semiconductor substrate (10), wherein second noncrystal semiconductor layer (22) has composition gradient along its degree of depth, from with the basic intrinsic at the interface of substrate (10) basic conduction to opposite sides, described second noncrystal semiconductor layer (22) has the selected conduction type that obtains by in conjunction with selected dopant atom;

    With(d) the 3rd noncrystal semiconductor layer (32), it is set on another part of rear surface (14) of Semiconductor substrate (10) and is spaced apart with second noncrystal semiconductor layer (22), wherein the 3rd noncrystal semiconductor layer (32) has composition gradient along its degree of depth, from with the basic intrinsic at the interface of substrate (10) the basic conduction to the opposite side, described the 3rd noncrystal semiconductor layer (32) have by in conjunction with selected dopant atom that obtain with the different conduction type of conduction type second amorphous layer (22).

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