Non-volatile semiconductor storage device

Non-volatile semiconductor storage device

  • CN 101,124,672 B
  • Filed: 02/18/2005
  • Issued: 07/30/2014
  • Est. Priority Date: 02/18/2005
  • Status: Active Grant
First Claim
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1. a Nonvolatile semiconductor memory device, is characterized in that,Having the flat shape being formed in semiconductor substrate and is separately cellular multiple diffusion layer, and in described diffusion layer, has the memory transistor that contains source region and drain region and select transistor,There is the word line that crosses multiple positions of diffusion layer described in each, and form described memory transistor or the described selection transistor using described word line as grid in the position that described word line crosses described diffusion layer,Described word line does not arrange two each other across for each of diffusion layer described in each.

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