Method of semiconductor wafer back processing, method of substrate back processing

Method of semiconductor wafer back processing, method of substrate back processing

  • CN 101,136,329 B
  • Filed: 08/23/2007
  • Issued: 05/30/2012
  • Est. Priority Date: 08/29/2006
  • Status: Active Grant
First Claim
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1. semiconductor wafer back processing, method method, this method comprises:

  • Radiation-curable pressure-sensitive adhesive sheet is used in front at semiconductor crystal wafer, and this radiation-curable pressure-sensitive adhesive sheet comprises base material film and the pressure sensitive adhesive layer of on a side of this base material film, arranging, the front of said semiconductor crystal wafer has depression and protrusion;

    Be attached to the back side of state polishing semiconductor wafers in the front of semiconductor crystal wafer with radiation-curable pressure-sensitive adhesive sheet;

    WithThereby the radiation exposure pressure-sensitive adhesive sheet solidifies the pressure sensitive adhesive layer, makes the back side experience surface treatment of the semiconductor crystal wafer of said process grinding then,Wherein the modulus of elasticity during 25 ℃

    before the radiation exposure of pressure sensitive adhesive layer is 5 to 60;

    The value (X) of the modulus of elasticity gained that records behind the radiation exposure of the modulus of elasticity that records before the radiation exposure of 000kPa and said adhering agent layer divided by said adhering agent layer is 8 * 10 -5To 0.35.

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