Method of forming element isolation film and nonvolatile semiconductor memory

Method of forming element isolation film and nonvolatile semiconductor memory

  • CN 101,136,355 A
  • Filed: 07/17/2007
  • Published: 03/05/2008
  • Est. Priority Date: 08/30/2006
  • Status: Active Application
First Claim
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1. the formation method of an element-isolating film, fill oxide is characterized in that to form the dielectric film that element separation is used in the groove in the element separation zone on being formed at Semiconductor substrate,Order is carried out following operation:

  • The 1st operation, under the situation that does not apply bias voltage on the surface, inside of described groove deposit contain the raw material of the plasmoid of aerobic and silicon;

    WithThe 2nd operation is applying the raw material of filling the plasmoid that contains aerobic and silicon under the situation of bias voltage to the inside of described groove.

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