Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings

Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings

  • CN 101,137,939 A
  • Filed: 01/09/2006
  • Published: 03/05/2008
  • Est. Priority Date: 01/07/2005
  • Status: Active Grant
First Claim
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1. water base removal composition, said composition is applicable to be removed photoresist and/or bottom antireflective coating (BARC) material from the microelectronic device substrate at its place, described composition is included at least a chaotropic solute and at least a basic salt in the aqueous medium, and wherein this removal is applicable to composition photoresist and/or BARC material are removed from the microelectronic device at its place.

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