Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings

Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings

  • CN 101,137,939 B
  • Filed: 01/09/2006
  • Issued: 09/03/2014
  • Est. Priority Date: 01/07/2005
  • Status: Active Grant
First Claim
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1. a water base removal composition, described composition is grouped into by following one-tenth:

  • At least one chaotropic solute, at least one basic salt, water and cosolvent,Wherein this at least one chaotropic solute comprises urea, and optionally further comprises 2-mercaptoimidazole and/or 2-mercaptobenzimidazole,Wherein said at least one basic salt comprises the not oxyhydroxide of metal ion, andWherein this removal is applicable to photoresist and/or bottom antireflective coating (BARC) material to remove from the microelectronic device at this material place with composition.

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