Modified method and device for preparing trichlorosilane and multicrystal silicon

Modified method and device for preparing trichlorosilane and multicrystal silicon

  • CN 101,143,723 B
  • Filed: 08/08/2007
  • Issued: 09/01/2010
  • Est. Priority Date: 08/08/2007
  • Status: Active Grant
First Claim
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1. method that in polysilicon preparation, prepares trichlorosilane by the chlorine hydride process, it comprises:

  • A) metalluragical silicon is heated to 300-500 ℃

    , the reactor of packing into then in baking powder stove;

    B) by the indirect heating device silicon tetrachloride is vaporized, heated, formation temperature is 160-600 ℃

    a silicon tetrachloride gas;

    C) by the indirect heating device hydrogen chloride gas is preheating to 150-300 ℃

    ;

    D) by well heater hydrogen is preheating to 300-600 ℃

    ;

    WithE) with step b), c) and the adding of gas d) reactor, wherein the mol ratio of hydrogen and silicon tetrachloride is 1-5;

    1, and the mol ratio of hydrogenchloride and silicon tetrachloride is 1;

    1-20, and make reactor remain on 400-600 ℃

    temperature and the pressure of 1.0-3.0MPa.

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