Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

  • CN 101,145,560 A
  • Filed: 09/14/2007
  • Published: 03/19/2008
  • Est. Priority Date: 09/15/2006
  • Status: Active Application
First Claim
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1. a semiconductor device is characterized in that, comprising:

  • First dielectric film, it is arranged on the Semiconductor substrate in the cell transistor zone;

    First conducting film, it is arranged on described first dielectric film;

    Dielectric film between electrode, it is arranged on described first conducting film;

    Second conducting film, it is arranged between described electrode on the dielectric film, and has first metal silicide film on its top surface;

    First regions and source, it is formed on the surface of described Semiconductor substrate, and clamps the zone under described first dielectric film;

    Second dielectric film, it is arranged on the described Semiconductor substrate at least one that select in gridistor zone and the periphery transistor zone;

    The 3rd conducting film, it is arranged on described second dielectric film, and has second metal silicide film on its top surface, and described second metal silicide film has the smaller thickness than described first metal silicide film;

    AndSecond regions and source, it is formed on the described surface of described Semiconductor substrate, and clamps the zone under described second dielectric film.

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