Memory device having wide area phase change element and small electrode contact area

Memory device having wide area phase change element and small electrode contact area

  • CN 101,145,599 A
  • Filed: 09/06/2007
  • Published: 03/19/2008
  • Est. Priority Date: 09/11/2006
  • Status: Active Application
First Claim
Patent Images

1. storage arrangement comprises:

  • Bottom electrode;

    Storage element, it is positioned on the described bottom electrode;

    AndTop electrodes comprises main part and service portion, and the substrate of the described service portion of wherein said top electrodes electrically contacts with the zonule on the surface of described storage element.

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