Semiconductor device

Semiconductor device

  • CN 101,149,818 A
  • Filed: 07/27/2007
  • Published: 03/26/2008
  • Est. Priority Date: 07/28/2006
  • Status: Active Grant
First Claim
Patent Images

1. semiconductor device comprises:

  • Be formed with first structure of antenna;

    Has semiconductor layer and by using the integrated circuit of the active component that this semiconductor layer forms, described semiconductor layer is sandwiched in and is formed between this semiconductor layer insulation course up and down;

    AndHave second structure than the rigidity of the described first structure height,Wherein, described antenna is connected by the penetrating electrode that is formed in described second structure with described integrated circuit,And described first structure forms by using plastic sheet, plastic foil, glass epoxy resin, glass plate, paper or nonwoven fabrics,And, use stupalith to form described second structure.

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