Film formation method and apparatus for forming silicon oxide film

Film formation method and apparatus for forming silicon oxide film

  • CN 101,154,589 A
  • Filed: 09/28/2007
  • Published: 04/02/2008
  • Est. Priority Date: 09/28/2006
  • Status: Active Application
First Claim
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1. the film build method that semiconductor processes is used in can selectively supplying with the processing region of first processing gas that comprises silicon source gas and the second processing gas that comprises oxidizing gas, forms oxide-film by CVD on processed substrate, it is characterized in that,This film build method repeatedly repeats following circulation, and the pellicular cascade with each described circulation forms forms the described oxide-film with specific thickness thus, and described cycle alternation comprises following operation:

  • First operation, it is supplied with described first to described processing region on the one hand and handles gas, stops to supply with described second to described processing region on the other hand and handles gas, forms siliceous adsorption layer thus on the surface of described processed substrate;

    WithSecond operation, it is on the one hand supplied with described second to described processing region and handles gas, stops to supply with described first to described processing region on the other hand and handles gas, and the lip-deep described adsorption layer of described processed substrate is carried out oxidation,Wherein, the amino silane gas that uses 1 valency or divalent is as described silicon source gas, than the situation of using 3 valency amino silane gases as described silicon source gas, sets treatment temperature in the described circulation than the lowland.

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