Method of manufacturing flash memory device

Method of manufacturing flash memory device

  • CN 101,154,632 A
  • Filed: 09/28/2007
  • Published: 04/02/2008
  • Est. Priority Date: 09/29/2006
  • Status: Active Application
First Claim
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1. method of making flash memory, this method comprises:

  • The Semiconductor substrate that includes source region and place is provided, wherein in described place, forms isolation structure;

    On described Semiconductor substrate, form the tunnel insulation layer and first conductive layer;

    On described first conductive layer, form dielectric layer;

    On described dielectric layer, form cap rock;

    On described cap rock, form hard mask layer;

    Described cap rock on the described isolation structure of etching and described dielectric layer are to form the hole;

    Remove described hard mask layer;

    WithForm therein and form second conductive layer on the porose described cap rock.

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