Optical semiconductor device

Optical semiconductor device

  • CN 101,158,731 B
  • Filed: 09/29/2007
  • Issued: 04/25/2012
  • Est. Priority Date: 10/06/2006
  • Status: Active Grant
First Claim
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1. optical semiconductor device, it comprises:

  • Semiconductor regions;

    Optical waveguide, it is sandwiched in, and first light that forms in the said semiconductor regions is enclosed layer and second light is enclosed between the layer;

    Dielectric film zone, it is formed on the outside and the said semiconductor regions on inboard at least one side of the bend central portion of said optical waveguide, and is formed by the dielectric film of the refractive index lower than semiconductor layer.

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