Semiconductor integrated circuit device

Semiconductor integrated circuit device

  • CN 101,159,266 A
  • Filed: 04/06/2004
  • Published: 04/09/2008
  • Est. Priority Date: 04/10/2003
  • Status: Active Application
First Claim
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1. semiconductor device comprises:

  • The first conductive type semiconductor substrate;

    MOS transistor is arranged in the described substrate, comprises the first grid dielectric film;

    AndMOS type capacitor element, be arranged in the described substrate, described MOS type capacitor element comprises second grid dielectric film, gate electrode and trap, wherein said second grid dielectric film, described gate electrode and described trap form electric capacity, and the thickness of described second grid dielectric film is thinner than the thinnest gate insulating film in the described first grid dielectric film of described MOS transistor.

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