Vertical channel transistor structure and manufacturing method thereof

Vertical channel transistor structure and manufacturing method thereof

  • CN 101,162,736 A
  • Filed: 09/20/2007
  • Published: 04/16/2008
  • Est. Priority Date: 10/11/2006
  • Status: Active Application
First Claim
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1. a vertical channel transistor structure is characterized in that, comprising:

  • One substrate;

    One raceway groove protrudes from this substrate;

    One sandwich construction is arranged on two vertical surface of this raceway groove;

    One grid is crossed on this sandwich construction, and is positioned on two vertical surface of this raceway groove;

    AndOne first end and one second end are positioned on the both sides of this raceway groove with respect to this grid respectively.

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