Semiconductor device and its manufacture method

Semiconductor device and its manufacture method

  • CN 101,170,127 A
  • Filed: 10/23/2007
  • Published: 04/30/2008
  • Est. Priority Date: 10/23/2006
  • Status: Active Grant
First Claim
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1. semiconductor device comprises:

  • One main electrode;

    AndOne dielectric medium is connected in described main electrode, and described main electrode comprises;

    One material, it has a work function and a work function and adjusts element, described work function adjust element in order to the work function of the described material of adjusting described main electrode reaching a predetermined value,Wherein said main electrode also comprises;

    One prevents to spread dopant elements, and it adjusts element towards described dielectric medium diffusion and/or diffuse into described dielectric medium in order to prevent described work function.

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